講者介紹

鄭克勇 教授

伊利諾大學香檳校區(UIUC) 

• 學歷：Stanford University - MSEE/PhD，中正理工學院 - BSEE
• 經歷：

伊利諾大學電機系教授、榮譽教授

國立清華大學電機資訊學院院長、教授、榮譽教授

貝爾實驗室研究員 

• 演講摘要：

This talk consists of four parts: 1) The invention and improvement of MBE technology (1968-1978); 2) Perfection of MBE technology (1978-1998); 3) Expansion of usage of MBE in science and technology; and 4) The future developments. The historical development of the technology will be presented first followed by discussions of the impact of new physics and devices achieved only possible using the MBE technology. Finally, the role of MBE technology in the realization of new physics and devices in the future will be discussed.

張翼 副校長

國立交通大學

• 學歷：

Ph.D University of Minnesota, USA 

• 經歷：

Vice President National Chiao Tung University, Taiwan

President Hexawave Corporation, Taiwan

Sr. MTS Comsat Lab. USA

Se. MTS Unisys Corp. USA

• 演講摘要：

現行半導體技術面臨物理極限的考驗，面對微縮電晶體通道尺寸的挑戰，關鍵在於改進電晶體的結構並搭配極佳的通道控制力及抑制短通道效應的能力。三五族材料如砷化銦鎵(InGaAs)與氮化鎵(GaN)具高電子遷移率、高崩潰電壓等優異特性，適用於發展前瞻高頻元件如高驅動電流與低漏電之電晶體。本演講將介紹III-V/Si整合之各類新穎奈米元件之磊晶組合，包含InGaAs FinFET通道層之磊晶、InAs/GaSb TFET之磊晶、整合GaN/Si磊晶之奈米元件，並介紹部分III-V/Si整合元件之電性量測結果。 

杜武青 教授 (引言人)

國立中興大學

• 學歷：B.Sc. (Honors) 1971: McGill University 物理系；M.Phil. 1972: Yale University 物理系；Ph.D. 1978: Yale University 工程應用科學系 

• 經歷：

2018-迄今: 玉山學者專案教授，國立中興大學，電機工程學系

1988-2018: Associate Professor to Distinguished Professor, University of California, San Diego電機電腦工程學系

2003-2013: Associate Dean, Jacobs School of Engineering, UC San Diego

1999-2003: Chair, Dept. of Electrical and Computer Engineering, UC San Diego

1980-1988: Member of Technical Staff to Distinguished MTS, AT&T Bell Labs,Murray Hill, New Jersey

1978-1980: Lecturer, Dept. of Physics, Yale University, New Haven, Connecticut

洪銘輝 教授

國立台灣大學

• 學歷：

1980 Ph.D. - University of California, Berkeley (Materials Science and Engineering)

1978 M.S. - University of California, Berkeley (Materials Science and Engineering)

1973 B.S. - National Taiwan University (Physics)

• 經歷：

Aug. 2011 - now: Prof., Grad. Inst. of Appl. Phys. and Dept. of Phys., Natl Taiwan Univ., Taipei, Taiwan.

June 2003 - July. 2011: Professor, Dept. Mat. Sci. and Eng., Natl Tsing Hua Univ., Hsin Chu, Taiwan.

Aug. 2009 - July 2010: Director, Ctr. for Nanotechnology, Materials Sci., and Microsystems, Natl Tsing Hua U., Hsin Chu, Taiwan.

Feb. 2001 - March 2003: Distinguished Member of Technical Staff, High Speed Electronic Devices and Photonic Interfaces Research, Agere Systems, Murray Hill, NJ.

July 1999 - January 2001: Distinguished Member of Technical Staff, Semiconductor Research Laboratory, Bell Laboratories, Lucent Technologies, Murray Hill, New Jersey.

Sept. 1981 - June 1999: Member of Technical Staff, Semiconductor Res. Lab. and Materials Res. Lab., Bell Labs, Murray Hill, NJ.

Aug. 1980 - Aug. 1981: Staff Scientist II, Mat. Mol. Res. Div., Lawrence Berkeley Lab., U. of Calif.

• 演講摘要：

Molecular beam epitaxy (MBE) for growing compound semiconductors in the 70's has been successfully extended to the growth of metals, oxides, semiconductors, the related hetero-structures, and topological materials by our endeavor in the past three and half decades. In the 80's, Kwo et al have invented metal- and oxide-MBE in pioneering spintronics and high-temperature superconducting oxide films. In driving compound semiconductors for optoelectronics, Hong et al have produced distributed Bragg reflectors with a continuously graded composition between each constituent without shutter operation, and greatly reduced the electrical resistance; this simple method has made easy manufacture of vertical-cavity surface-emitting lasers. In the 90's, combining (In)GaAs and oxide MBE chambers via ultra-high vacuum, Hong et al were the first to unpin the Fermi level in oxide/GaAs, which led to the first demonstration of inversion-channel (In)GaAs metal-oxide-semiconductor field-effect transistors (MOSFETs). Integrating MBE, atomic layer deposition (ALD), and many other functions in ultra-high vacuum, advances have been made in pushing ultimate complementary MOS (CMOS) of record-high device performances and beyond in growing emergent topological materials for spintronics. Our novel method in preserving as-grown (In)GaAs surfaces and interfaces with high-k oxides and metals enables employing in-situ synchrotron radiation photoemission to study electronic structures in an atomic scale.

林浩雄 教授

國立台灣大學

• 學歷：

台灣大學電機系博士

• 經歷：

台灣大學電機系、電子研究所、光電研究所教授

• 演講摘要：

Bismuth (Bi) is a semimetal with a small band overlap which can be opened and transform the Bi into a semiconductor using quantum confinement effect. This property allows the applications to Bi semiconductor devices on Si platform. In this talk, I will present the MBE growth of Bi crystal on Si substrates as well as on thermal grown SiO2 and ALD grown Al2O3. In Bi crystal, the covalent bonded Bi atoms formed 2D bilayers and the bilayers stack in ABC closed packed sequence with semi-covalent or quasi-van der Waals bonding. Results from TEM, TED, HRXRD, EBSD and AFM measurements will be presented to show the structure properties of the Bi grown on Si and to prove that the growth is a quasi-van der Waals epitaxy. Possible growth mechanisms will be discussed. The electrical properties of the Bi thin films will also be presented. 

高永中 執行長兼總經理

林聖迪 教授

國立交通大學 

• 學歷：

B.S.: Department of Physics, National Taiwan Univesity (1988-1992).

M.S.: Department of Physics, National Taiwan University (1992-1994).

Ph.D.: Department of Electronics Engineering, National Chiao Tung University (1996-2002)

• 經歷：

Professor, Department of Electronics Engineering, National Chiao Tung University (2013-present)

Associate professor, Department of Electronics Engineering, National Chiao Tung University (2008-2013)

Assistant professor, Department of Eletronics Engineering, National Chiao Tung University (2005-2008)

Post-doc. Cavendish Laboratory, Cambridge University (2002-2005)

• 演講摘要：

In this talk, following a short introduction to molecular beam epitaxy systems in NCTU, the epitaxial growth of aluminum nanofilms by using solid-source molecular beam epitaxy will be presented. High-quality aluminum films have been successfully grown on various substrates. Device applications using these nano-scale aluminum films will be demonstrated. Very Recent works on atomic-scale aluminum films and their physical properties will also be introduced. 

 鄭鴻祥 教授

國立台灣大學 

• 學歷：

Ph.D Oxford University United Kingdom 

• 經歷：

Professor

Center for Condensed Matter Sciences and Graduate Institute of Electronics Engineering, National Taiwan University, Taipei, Taiwan, R. O. C. 

謝明勳 副總經理(引言人)

晶元光電股份有限公司

綦振瀛 副校長

台灣聯合大學系統 

• 學歷：

美國伊利諾大學香檳校區電機博士 

• 經歷：

國立中央大學前瞻科技研究中心主任 

台灣聯合大學系統副校長 

國家實驗研究院副院長 

國立中央大學講座教授 

國立中央大學資訊電機學院院長 

國立中央大學光電科學研究中心主任 

國立中央大學電機系教授

• 演講摘要：

GaN-based high electron mobility transistors (HEMTs) have drawn a great deal of interests for applications in power electronics and millimeter-wave amplifiers. While epilayer structures are different for different applications, the quest for high electron mobility on these heterostructures is just as important. In this talk, we will present a number of methods to enhance the electron mobility of GaN-based HEMTs grown on Si by metal-organic chemical vapor deposition (MOCVD) and identify the key mechanisms that govern their electrical properties. 

楊志忠 特聘教授

國立台灣大學

• 學歷：Ph.D., University of Illinois, Urbana-Champaign, USA
• 經歷：

Assistant and Associate Professors, The Pennsylvania State University, USA

Professor and Distinguished Professors, National Taiwan University, ROC

• 演講摘要：

In this presentation, we review the growth of regularly patterned GaN nanorod (NR) arrays with MOCVD based on the self-catalytic vapor-liquid-solid mode or the pulsed growth technique. By alternatively switching Ga and N sources, Ga droplets are first formed at the tops of NRs followed by the deposition of GaN at the NR tops when N is supplied. When InGaN/GaN quantum wells and p-GaN shells are deposited onto the sidewalls of n-GaN NR cores through the ordinary two-dimensional growth, vertical light-emitting diode (LED) structures are formed. The growth techniques and light-emitting behaviors of such a vertical LED array are discussed. Also, the growth mechanisms and their theoretical models are presented in this talk. Meanwhile, the growth behaviors of AlGaN shells on GaN NRs are demonstrated and modeled.

林昆泉 總經理

聯鈞光電股份有限公司 竹科分公司

• 學歷：

國立交通大學電子研究所博士 

• 經歷：

全新光電股份有限公司 創立者/總經理/董事長

• 演講摘要：

Gallium-nitride-on silicon (GaN-on-Si) has demonstrated the ability to operate at higher temperatures, higher power densities, higher voltages and higher frequencies. These ability make them highly interesting for use in future electronic systems for high-voltage power switching and power conversion, RF power amplify applications. The lattice mismatched between GaN and Si is an issue need to be overcome for reducing the defects on GaN-on-Si epitaxy. This talk shows how to optimize all the factors including the choice of Si substrate, buffer structure and epitaxy technology for GaN-on-Si power device.  

金宇中 副總經理

全新光電科技股份有限公司

• 學歷：

國立台灣大學物理系 學士 (1992~1996)

國立交通大學電子工程研究所 碩士.(1998~2000)

國立台灣大學電子工程研究所 博士.(2008~2013) 

• 經歷：

全新光電 研發工程師 (2000~2005)

全新光電 研發經理 (2005~2008)

全新光電 研發處長 (2008~2014)

全新光電 研發副總經理 (2014 to present) 

• 演講摘要：

1. Introduction on why Sb based materials is chosen in VPEC for HBTs.

2. InGaP/GaAsSb/GaAs DHBT

3. InGaP/GaAsSbP/GaAs DHBT

4. Conclusion. 

何漢傑 博士

嘉晶電子股份有限公司 

• 學歷：Ph.D., Department of Electrical Engineering, National Central University., Taiwan
• 經歷：

Episil-Precision Incorporation(嘉晶電子),Compound Business Division, Taiwan Project Manager

Industrial Technology Research Institute(工業技術研究院),EOSL, Taiwan Power Device project leader 

• 演講摘要：

This talk will briefly introduce SiC product and technology in EPI. Episil group provide one stop solution in SiC epitaxy and foundary servic. Now, 4" SiC SBD and MOSFET template is available. 6" SiC epitaxy is ready and foundary service will be released at Q3 2019.